期刊
MICROELECTRONICS RELIABILITY
卷 76, 期 -, 页码 588-591出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2017.07.005
关键词
Laser diode; Catastrophic optical damage; Thermal conductivity; Single quantum well; Multiple quantum wells; Finite element methods
资金
- Spanish Government [ENE2014-56069-C4-4-R]
- Junta de Castilla y Leon [VA293U13, VA081U16]
- FPU programme of the Spanish Government [FPU14/00916]
The catastrophic degradation of laser diodes with active zones comprising either single (SQW) or multiple quantum wells (MQW) has been analysed via finite element methods. This analysis is based on a physical model that explicitly considers the thermal and mechanical properties of the diode laser structure and the relevant size effects associated with the small thickness of the active layers of the device. The reduced thermal conductivities and the thermal barriers at the interfaces result in a significant local heating process which is accentuated as more quantum wells form the active part of the device. Therefore, in the design of high power devices, the SQW configuration would be more appropriate than the MQW alternative. (C) 2017 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据