期刊
MICROELECTRONICS RELIABILITY
卷 69, 期 -, 页码 36-39出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2016.12.007
关键词
Cryogenic electronics; Threshold voltage; MOSFETs
资金
- University of Sydney, Australian Institute for Nanoscale Science and Technology Accelerator Scheme
An enhanced threshold voltage model for MOSFETs operating over a wide range of temperatures (6-300K) is presented. The model takes into account the carrier freeze-out effect and the external field-assisted ionization to address the temperature dependence of MOS transistors. For simplicity, an empirical function is incorporated to predict short channel effects over the temperature range. The results from the proposed model demonstrate good agreement with NMOS and PMOS transistors measured from fabricated chips. (C) 2016 Elsevier Ltd. All rights reserved.
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