期刊
MICROELECTRONICS RELIABILITY
卷 75, 期 -, 页码 9-13出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2017.06.003
关键词
Room temperature RF sputtering; HfO2 and HIZO thin films; Bias stress stability
资金
- CONACyT [237213, CB-2014/240103]
- PRODEP Tematic Network Desarrollo de Nuevos Dispositivos de Estado Solid y sus Aplicaciones under the project Estudio de Dispositivos Electronicos y Electromecanicos con Potencial Aplicacion en Fisiologia y Optoelectronica in Mexico
MIS structures using HfO2 and HIZO layers, both deposited by room temperature RF magnetron sputtering are fabricated for TFTs application and characterized using capacitance-voltage. The relative dielectric constant obtained at 1 kHz was 11, the charge carrier concentration of the HIZO was in the range of (2-3) x 10(18) cm(-3) and the interface trap density at flat band was smaller than 2 x 10(12) cm(-2). The critical electric field of the HfO2 layer was higher than 5 x 10(5) V/cm, with a current density in the operating voltage range below 4 x 10(-8) A/cm(2). The hysteresis and bias stress behavior of RF-sputtered HfO2/HIZO MIS structures is presented. Fabricated HfO2/HIZO TFTs worked in the operation voltage range below 8 V. (C) 2017 Elsevier Ltd. All rights reserved.
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