期刊
MICROELECTRONIC ENGINEERING
卷 167, 期 -, 页码 69-79出版社
ELSEVIER
DOI: 10.1016/j.mee.2016.10.003
关键词
Organosilicate glass; PECVD; Porosity; UV curing
Significant advances have been made in the realization of porous SiOCH by chemical vapor deposition processes. In this paper, the different approaches developed to introduce porosity in an organosilicate thin films are described with a specific focus on the new concepts to obtain highly porous SiOCH by CVD and to simplify the existing processes. A second part of the paper is dedicated to the application of these porous SiOCH thin films in nanotechnologies: from low-kappa dielectrics to chemical and biochemical sensors. (C) 2016 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据