4.4 Article

SiOCH thin films deposited by chemical vapor deposition: From low-κ to chemical and biochemical sensors

期刊

MICROELECTRONIC ENGINEERING
卷 167, 期 -, 页码 69-79

出版社

ELSEVIER
DOI: 10.1016/j.mee.2016.10.003

关键词

Organosilicate glass; PECVD; Porosity; UV curing

向作者/读者索取更多资源

Significant advances have been made in the realization of porous SiOCH by chemical vapor deposition processes. In this paper, the different approaches developed to introduce porosity in an organosilicate thin films are described with a specific focus on the new concepts to obtain highly porous SiOCH by CVD and to simplify the existing processes. A second part of the paper is dedicated to the application of these porous SiOCH thin films in nanotechnologies: from low-kappa dielectrics to chemical and biochemical sensors. (C) 2016 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据