期刊
MICROELECTRONIC ENGINEERING
卷 182, 期 -, 页码 42-45出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2017.09.001
关键词
Resistive switching memory (RRAM); Neuromorphic applications; Threshold switching
资金
- MOTIE [10067794]
- KSRC
- Korea Evaluation Institute of Industrial Technology (KEIT) [10067794] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate the dependency of dual functionality on the operating current with threshold and multilevel switching behaviors in HfO2-based resistive memory (RRAM) devices. These devices can be used to produce electronic neurons and synapses for neuromorphic computing applications. The control of the formation and rupture of a conductive filament (CF) driven by the movement of oxygen vacancies (V-0) in a high-current (100 mu A) operated RRAM acting as synapse enables multilevel conductance states to be achieved. On the other hand, operation of the device in the low-current regime (<= 10 mu A) leads to a transition from-memory to threshold switching, which is activated only by applying voltage. This behavior is described by a weak CF composed of a few V0 created by using a Poole-Frenkel based analytical model. Thus, threshold switching in RRAM operated at a low current plays a role in generating output spikes as neurons when the accumulated inputs exceed the critical value. (C) 2017 Elsevier B.V. All rights.reserved.
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