期刊
MICROELECTRONIC ENGINEERING
卷 178, 期 -, 页码 250-253出版社
ELSEVIER
DOI: 10.1016/j.mee.2017.05.028
关键词
Ferroelectric tunnel junction; Ultrathin ferroelectric films; HfO2-based ferroelectrics; Electron transport
资金
- Russian Science Foundation [14-19-01645]
- Russian Science Foundation [17-19-00047] Funding Source: Russian Science Foundation
In this work, we report on the electron transport properties of ultrathin (similar to 2.5 nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (AID) technique directly on the highly doped Si substrate. On the devices with TiN top electrode we demonstrate the reversible electroresistance change R up arrow/ R down arrow up to 3 across HZO layer following the polarization reversal. We further correlate the electroresistance switching with the polycrystalline structure of the the HZO layer, the polarization measurements, the current lateral distribution over the HZO layer as well as DFT calculations of the electronic band structure. Such analysis reveals that the polarization switching in ferroelectric HZO grains contribute to the current transport in TiN/HZO/ n(+)-(p(+) -)Si devices. (C) 2017 Elsevier B.V. All rights reserved.
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