期刊
NATURE ELECTRONICS
卷 2, 期 3, 页码 108-114出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41928-019-0220-7
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资金
- Air Force Office of Scientific Research (AFOSR) Multidisciplinary University Research Initiative (MURI) [FA955016-1-0031]
- National Science Foundation (NSF) EFRI 2-DARE grant [1542883]
- AFOSR grant [FA9550-14-1-0251]
- Initiative for Nanoscale Materials and Processes (INMP)
- Stanford Non-volatile Memory Technology Research Initiative (NMTRI)
- Stanford SystemX Alliance
- ASCENT, one of six centres in JUMP, a Semiconductor Research Corporation (SRC) programme - DARPA
- University of Michigan-Shanghai Jiao Tong University Joint Institute at Shanghai Jiao Tong University
- Stanford Graduate Fellowship programme
- NSF Graduate Research Fellowship [DGE-114747]
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1542883] Funding Source: National Science Foundation
Ternary content-addressable memory (TCAM) is specialized hardware that can perform in-memory search and pattern matching for data-intensive applications. However, achieving TCAMs with high search capacity, good area efficiency and good energy efficiency remains a challenge. Here, we show that two-transistor-two-resistor (2T2R) transition metal dichalcogenide TCAM (TMD-TCAM) cells can be created by integrating single-layer MoS2 transistors with metal-oxide resistive random-access memories (RRAMs). The MoS2 transistors have very low leakage currents and can program the RRAMs with exceptionally robust current control, enabling the parallel search of very large numbers of data bits. These TCAM cells also exhibit remarkably large resistance ratios (R-ratios) of up to 8.5 x 10(5) between match and mismatch states. This R-ratio is comparable to that of commercial TCAMs using static random-access memories (SRAMs), with the key advantage that our 2T2R TCAMs use far fewer transistors and have zero standby power due to the non-volatility of RRAMs.
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