4.6 Article

Grain Growth in Nanocrystalline Mg-Al Thin Films

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SPRINGER
DOI: 10.1007/s11661-017-4350-0

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  1. Vehicle Technologies Office of the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy
  2. Laboratory Directed Research and Development (LDRD) Program Chemical Imaging Initiative at Pacific North-west National Laboratory (PNNL)
  3. Department of Energy's Office of Biological and Environmental Research (BER) at PNNL
  4. DOE [DE-AC05-76RL01830]

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An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg-Al thin films containing similar to 10 wt pct Al and with 14.5 nm average grain size were produced by magnetron sputtering and subjected to heat treatments. The grain growth evolution in the early stages of heat treatment at 423 K, 473 K, and 573 K (150 degrees C, 200 degrees C, and 300 degrees C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7 +/- 2 and the activation energy for grain growth was 31.1 +/- 13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems. (C) The Minerals, Metals & Materials Society and ASM International 2017

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