期刊
PHYSICAL REVIEW B
卷 99, 期 5, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.99.054106
关键词
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资金
- National Natural Science Foundation of China [11674055, 11604011]
- National Key Research and Development Program of China [2016YFA0302300]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4413]
( )The distribution and manipulation of oxygen defects, including oxygen vacancies (O-v) and interstitial oxygen (O-t), directly results in modifications in a variety of emergent functionalities in transition metal oxides. This is applicable in nanoscale control, which is a key issue in data and energy storage devices, such as resistive switching memory. Among all the oxygen-defect-related topics, nanoscale oxygen defect migration paths have a direct impact on the performance of memory devices, and are intrinsically determined by the structural anisotropy. Here, we use layered single-crystalline ferroelectric, hexagonal manganites (h-REMnO3) to demonstrate O-i-migration-induced nanoscale manipulation of conductance in the ab plane. Conversely, this unique phenomenon cannot be achieved along the c axis. Furthermore, a density functional theory calculation reveals that the energy barriers are lower for planar migrations of O-i, when compared to out-of-plane migration, and are responsible for such anisotropic resistance switching.
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