期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 7, 期 1, 页码 382-387出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2019.2901298
关键词
Residual stress; tungsten volume; curvature method; interface trap densities; MONOS structure
资金
- Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2016M3A7B4910398]
- Samsung Electronics' University Research and Development Program
The effect of residual stress during the tungsten deposition process were investigated using metal-oxide-nitride-oxide-semiconductor (MONOS) devices. The variation of residual stress due to tungsten volume was measured under tensile and compressive stress conditions. Residual stress increased in proportion to the deposition volume. Stress influenced the Si/SiO2 interface and caused deterioration of the electrical properties, which was experimentally observed during measurements of the interface trap densities and memory windows. We confirmed that residual stress led to degradation of the cell characteristics of MONOS devices, and the absolute value of stress significantly affected these issues regardless of the polarity. From our experiments results, we can predict the degradation of cell characteristics in memory devices, and confirm the need for appropriate stress control in manufacturing process.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据