期刊
SCIENTIFIC REPORTS
卷 9, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-019-40547-0
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资金
- JSPS KAKENHI [18K18844]
- JSPS [18J20904]
- Advanced Technology Institute Research Grants [RG2906]
- JST PRESTO [JPMJPR17R7]
- Grants-in-Aid for Scientific Research [18J20904, 18K18844] Funding Source: KAKEN
The layer exchange technique enables high-quality multilayer graphene (MLG) on arbitrary substrates, which is a key to combining advanced electronic devices with carbon materials. We synthesize uniform MLG layers of various thicknesses, t, ranging from 5 nm to 200 nm using Ni-induced layer exchange at 800 degrees C. Raman and transmission electron microscopy studies show the crystal quality of MLG is relatively low for t <= 20 nm and dramatically improves for t >= 50 nm when we prepare a diffusion controlling Al2O3 interlayer between the C and Ni layers. Hall effect measurements reveal the carrier mobility for t = 50 nm is 550 cm(2)/Vs, which is the highest Hall mobility in MLG directly formed on an insulator. The electrical conductivity (2700 S/cm) also exceeds a highly oriented pyrolytic graphite synthesized at 3000 degrees C or higher. Synthesis technology of MLG with a wide range of thicknesses will enable exploration of extensive device applications of carbon materials.
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