High-Quality Schottky Barrier Diodes on β-Gallium Oxide Thin Films on Glass Substrate

Structural, electrical and optical properties of monoclinic gallium oxide thin films, deposited by pulsed laser deposition on glass substrates, are reported. The influence of growth temperature on thin film properties was investigated. Further, Ga2O3 buffer layers, grown and/or annealed at different temperatures, can be used to reduce the surface roughness of subsequently grown thin films. On thin films obtained from optimized growth parameters, Schottky barrier diodes were fabricated by reactive magnetron sputtering of Pt. Interestingly, Schottky diodes realized on thin films on glass substrate (without optimized buffer layer) have similarly good properties as diodes realized on thin films grown epitaxially on c-plane sapphire. The results stimulate realization of e.g. solar-blind photo detectors on low cost and possibly large area glass substrates. (c) The Author(s) 2019. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.