Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (-201) Bulk β-Ga2O3

Valence and conduction band offsets of the InN/beta-Ga2O3 type-I heterojunction have been determined to be -0.55 +/- 0.11 eV and -3.35 +/- 0.11 eV, respectively, using X-ray photoelectron spectroscopy. The InN layers were grown using atomic layer epitaxy on (-201) oriented commercial beta-Ga2O3 substrates. Combining this data with published band offsets for the GaN and AlN heterojunctions to beta-Ga2O3 has allowed us to predict the band offsets for the AlGaN, AlInN, and InGaN ternary alloys to beta-Ga2O3. The conduction band offsets for InGaN and AlInN to beta-Ga2O3 increased for high In concentration and, similarly, the valence band offsets for AlGaN and AlInN to beta-Ga2O3 decreased at high Al concentration. (C) The Author(s) 2019. Published by ECS.