期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 70, 期 -, 页码 260-264出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.11.016
关键词
Epitaxial high-k gate insulator; La2O3; Stacked structure; Germanium
类别
资金
- Japan Society for the Promotion of Science (JSPS) [JP25246020, JP16H02333]
- Murata Science Foundation
- Grants-in-Aid for Scientific Research [26289090, 16H02333] Funding Source: KAKEN
Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (D-it) is estimated to be less than 10(12) cm(-2) eV(-1) at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.
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