期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 66, 期 -, 页码 232-240出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.04.031
关键词
ZnO nanorod; Seed layer; Hydrothermal growth; I-V characteristics; Structural properties; Optical properties; Rectification ratio; Ideality factor; Photo response transient
类别
资金
- Mid-career Researcher Program through National Research Foundation grant - Ministry of Education, Science and Technology [2016006533]
Hydrothermal zinc oxide (ZnO) nanorod (NR)-based p-Si/n-ZnO and p-Si/i-SiO2/n-ZnO heterojunctions were fabricated, and the effects of interfacial native SiO2 (similar to 4 nm) on the I -V characteristics of heterojunctions under dark and ultra-violet illumination conditions were investigated. First, the structural and optical properties of ZnO seed crystals grown by sol-gel method and hydrothermal ZnO NRs on two different substrates of p-Si and pSi/i-SiO2 were examined, and more improved optical and crystalline quality was obtained as revealed by photoluminescence and X-ray diffraction. The p-i-n heterojunctions showed 3 times greater forward-bias currents and enhanced rectifying property than those of p-n junctions, which is attributed to the role of native SiO2 in carrier confinement by promoting the electron-hole recombination current through the deep level states of ZnO crystal. The measured ratios of photocurrent to dark current of the p-i-n structure were also greater under reverse bias (92-260) and forward bias (2.3-7.1) conditions than those (28-225 for reverse bias, 1.6-6.8 for forward bias) of p-n structure, and the improved photosensitivity of the p-i-n structure under reverse bias is due to lower density of recombination centers in the ZnO NR crystals. Fabricated ZnO NR heterojunction showed repeatable and fast photo-response transients under forward bias condition of which response and recovery times were 7.2 and 3.5 s for p-i-n and 4.3 and 1.7 s for p-n structures, respectively.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据