期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 62, 期 -, 页码 135-155出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.10.016
关键词
Nanowire; Doping; Issue; Growth; VLS; Mechanism; Control; Morphology
类别
资金
- LDRD program at Los Alamos National Laboratory
- National Science Foundation [DMR-1503595, ECCS-1351980]
- Office of Naval Research Multidisciplinary University Research Initiative (ONR MURI) [N00014-13-1-0678]
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1351980] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1503595] Funding Source: National Science Foundation
The anisotropic growth of one-dimensional or filamental crystals in the form of microwires and nanowires constitutes a rich domain of epitaxy and newly enabled applications at different length and size scales. Significant progress has been accomplished in controlling the growth, morphology, and properties of semiconductor nanowires and consequently their device level performance. The objective of this review is two-fold: to highlight progress up to date in nanowire doping and to discuss the remaining fundamental challenges. We focus on the most common semiconductor nanowire growth mechanism, the vapor-liquid-solid growth, and the perturbation of its kinetic and thermodynamic aspects with the introduction of dopants. We survey the origins of dopant gradients in nanowire growth and summarize quantification techniques for dopants and free-carrier concentrations. We analyze the morphological changes due to dopants and the influence of growth droplet seeds on composition and morphology and review growth aspects and alternatives that can mitigate these effects. We then summarize some of the remaining issues pertaining to dopant control in nanowires.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据