期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 57, 期 -, 页码 63-69出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.10.004
关键词
AlInGaN; Thin film; Sputtering; Electrical property; High turn-on voltage
类别
资金
- Ministry of Science and Technology of Taiwan [MOST 104-2623-E-011-003-ET]
By reactive sputtering in an atmosphere mixed with Ar and N-2, AlInGaN films were deposited from Al0.05InxGa0.95-xN (x=0.075, 0.15 and 0.25) targets on Si (100) with a substrate temperature of 200 degrees C and a radio-frequency (RF) output power of 120 W. Hot pressing was used to create a series of cermet targets mixed with metal powders and ceramic GaN for sputtering. The AlInGaN films demonstrate a wurtzite crystalline structure with a preferential m-(1010) growth plane. We investigated the effect of compositional changes on the formation of the AlInGaN film and its electrical and optical properties. Then, I-V measurements were conducted on a straightforward n-AlInGaN/p-Si heterostructure diode, with the device containing the film deposited from the Al0.05In0.075Ga0.875N target exhibiting the highest turn-on voltage of 9.2 V and the lowest leakage current of 6.65x10(-9) A (at - 5 V).
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