期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 71, 期 -, 页码 366-373出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.06.008
关键词
Solar cell; p-type polycrystalline silicon thin film; Magnetron sputtering; Aluminium induced crystallization
类别
资金
- National Basic Research Program of China [2015CB351900]
- National Natural Science Foundation of China [61176059, 61210014, 61321004, 61307024, 61574082, 51561165012]
- High Technology Research and Development Program of China [2015AA017101]
- Tsinghua University Initiative Scientific Research Program [20131089364, 20161080068, 20161080062]
- State Key Laboratory on Integrated Optoelectronics [IOSKL2014KF09]
Solar cells consist of n-Si wafer and p-Si polycrystalline thin film, which was solely fabricated by magnetron sputtering, and aluminium induced crystallization, are presented in this paper. Firstly, the material and electrical properties of the fabricated p-Si thin films including the crystallization ratio, grain size, morphology, carrier density and mobility were studied by Raman spectroscopy, X-ray diffraction (XRD), scanning electron microscopy and Hall Effect measurement, respectively. The p-Si polycrystalline thin film formed under optimal process conditions had the crystallization ratio of similar to 99% and the grain size of similar to 64.6 nm, determined from the data of Raman spectroscopy and XRD. The hole concentration in the fabricated p-Si polycrystalline thin films was mainly in the order of 10(17) cm(-3) to 1019 cm(-3), and their corresponding mobility values ranged from 15 cm(2)/V s to 65 cm(2)/V s. Then solar cells with the device structure of Al electrode/n-Si wafer/p-Si thin film/Al electrode were fabricated, and their electrical properties were measured both under dark and illumination conditions by the semiconductor performance tester and solar simulator. The measured J-V curves under dark condition confirmed the creation of a p-n junction with the ideality factor of 1.55, rectification ratio of 410 at +/- 1 V, and the reverse saturation current of 246 nA/cm(2). The efficiency of 2.19%, with an open circuit voltage of 448 mV and a short circuit current density of 11.2 mA/cm(2), was achieved under AM1.5G standard illuminations.
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