期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 70, 期 -, 页码 283-287出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.09.024
关键词
Ge; STS FET; Field emission tunneling; Schottky contacts
类别
资金
- Interdisciplinary Programs in Education and Projects in Research Development, Kyushu University, Japan [27122]
- Japan Society for the Promotion of Science (JSPS) Core-to-Core Program, A. Advanced Research Networks
- Grants-in-Aid for Scientific Research [26289090] Funding Source: KAKEN
An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short channel effect and to reduce the off-state current. An obstacle to implement a STS FET with a high mobility Ge channel was to form a metal/Ge contact with a low electron barrier height (OBN). Recently, we succeeded in the fabrication of a TiN/Ge contact with an extremely low Phi(BN). In this study, a Ge-STS n-channel FET was fabricated, here PtGe/Ge and TiN/Ge contacts were used as the source and the drain. The device showed well-behaved transistor operation. From the current-voltage measurements in the wide temperature range of 160-300 K, the conduction mechanism from the source to the channel is confirmed to be field emission tunneling. This result will be the first step toward achieving a high-performance Ge-STS n-FET.
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