期刊
MATERIALS LETTERS
卷 195, 期 -, 页码 186-189出版社
ELSEVIER
DOI: 10.1016/j.matlet.2017.02.046
关键词
Sb2S3 thin films; In situ growth; Reactive sputtering; Top sub-cells
资金
- Fundamental Research Funds of Central South University [2016zzts284, 2016zzts287]
- National Natural Science Foundation of China [51272292]
- Hunan Provincial Natural Science Foundation of China [13JJ1003, 2015JJ2175]
Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (V-oc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells. (C) 2017 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据