Enhanced thermoelectric performance of SnSe doped with layered MoS2/graphene

We report the enhancement of thermoelectric properties in p-type SnSe by the addition of layered MoS2/graphene (MoS2/G). Highly oriented SnSe + MoS2/G (x wt%, x = 0, 0.2, 0.4, 0.8, 1.6 and 3.2) composites have been synthesized by rapid induction melting followed by rapid hot pressing. It is found that the addition of MoS2/G can enhance the maximal power factor from similar to 1.83 mu W cm(-1) K-2 for pristine SnSe to similar to 4.68 OAT cm(-1) K-2 for a SnSe + 3.2 wt% MoS2/G sample. Moreover, the layered MoS2/G also contributes to a low lattice thermal conductivity due to phonons scattering at grain boundaries. A maximum ZT of 0.98 is achieved in the SnSe + 3.2 wt% MoS2/G sample at 810 K Our results provide a possible strategy to enhance the thermoelectric performance of SnSe. (C) 2017 Elsevier B.V. All rights reserved.