期刊
MATERIALS LETTERS
卷 209, 期 -, 页码 558-561出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2017.08.052
关键词
p-Type; beta-Ga2O3 thin film; Mg-doping; Solar-blind photodetector
资金
- National Natural Science Foundation of China [51572241, 51572033, 51172208, 11404029]
- Science Foundation of Zhejiang Sci-Tech University (ZSTU) [16062190-Y]
- Science and Technology Department of Zhejiang Province Foundation [2017C37017]
- Xinmiao Talent Program of Zhejiang Province [2015R406072]
The p-type high insulating thin films were obtained by doping Mg into beta-Ga2O3. Thin films with various Mg concentrations were deposited on (0001) c-plane Al2O3 substrate by radio frequency magnetron sputtering followed by post-annealing treatment. The crystal structure expanded due to the substitution of the trivalent Ga3+ with the divalent Mg2+ in a larger ion radius. The Fermi level (E-F) of the Mg doped film is closer to the valence band, exhibiting a characteristic of weak p-type. The Mg doped Ga2O3 thin films were used to construct the metal/semiconductor/metal (MSM) structure, and the devices showed a high resistance (4.1 pA at 10 V), a high sensitivity (8.7 x 10(5)%), a high responsivity (23.8 mA/W) and a short decay time (0.02 s) under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetector. (c) 2017 Elsevier B.V. All rights reserved.
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