Preparation of p-type CuCo2O4 thin films by sol-gel processing

This study reports the preparation of CuCo2O4 thin film on glass substrate using the sol-gel processing. CuCo2O4 thin films were formed at sol-gel derived specimens annealing at 200-400 degrees C in O-2, which were further confirmed with four intense Raman active modes approximately at 187 cm(-1), 460 cm(-1), 508 cm(-1), and 660 cm(-1), respectively. Two optical bandgaps of CuCo2O4 thin films were found at 2.12-2.15 eV and 1.32-1.34 eV, respectively. Additionally, conductivities of the thin films were (0.53-1.17) S/cm with corresponding carrier concentrations of (2.18-5.38)x 10(18) cm(-3). Hence, the sol-gel processing provides a feasible method to prepare CuCo2O4 thin films.