期刊
PHYSICAL REVIEW B
卷 99, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.99.161403
关键词
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资金
- DFG [SPP 1666, HO 3324/8, HO 3324/12]
- Munich Center for Quantum Science and Technology (MC-QST) [EXC-2111-390814868]
- Molecular Foundry - Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
Using Hall photovoltage measurements, we demonstrate that a linear transverse Hall voltage can be induced in few-layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photon-helicity induced Hall effect coincides with a particular crystal axis. Our results are consistent with the underlying Berry curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using time-resolved optoelectronic autocorrelation spectroscopy, we find that the decay time of the detected Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests that a helicity induced nonequilibrium spin density on the Fermi surface after the initial charge carrier relaxation gives rise to a linear Hall effect.
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