Halide perovskites for resistive random-access memories

Halide perovskite based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because their switching material-halide perovskite-has received considerable attention in recent years. Among the electrical characteristics of the material, its current-voltage (I-V) hysteresis, which may occur due to defect formation and migration, means that ReRAM can employ halide perovskites as a resistive switching material. Many studies have been conducted on resistive switching materials; however, the investigation of halide perovskites for ReRAM devices is still in the early research stages; therefore, the application of halide perovskites in ReRAM devices is a topic worth studying. Herein, we introduce halide perovskites and their operating mechanism within a ReRAM device. Moreover, recent notable achievements along with future challenges have been reviewed.