期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 7, 期 16, 页码 4879-4886出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9tc00717b
关键词
-
资金
- Shenzhen Peacock Program [KQTD2014062714543296]
- Shenzhen Engineering Laboratory [SFG(2016)1592]
- Shenzhen Science and Technology research grant [JCYJ20160510144254604, JCYJ2017 0412150946440, JCYJ20170818090312652, JCYJ20170412151139619]
- Shenzhen OLED Materials and Devices Technology Engineering Research Center (Shenzhen development and reform commission) [[2018]1410]
- National Basic Research Program of China (973 Program) [2015CB856505]
- China (Shenzhen)-Canada Technology Collaboration Project [GJHZ20180420180725249]
- China (Shenzhen)-Japan Technology Collaboration Project [GJHZ20170313145614463]
- Shenzhen Hong Kong Innovation Circle joint R and D project [SGLH20161212101631809]
- Natural Science Foundation of China [51803005]
- National Science and Engineering Council of Canada
- Peng Cheng Scholar award
The gate dielectric layer is one of the important components in organic thin film transistors (OTFTs) which affects the charge mobility, power consumption and stability of the device. Here, we report new composite polymer dielectrics prepared by sol-gel chemistry from commercial siloxanes and poly(vinyl alcohol), featuring a high dielectric constant (k similar to 8-16) and hydrophobicity. OTFTs fabricated with the developed polymer dielectric exhibit ultra-low driving voltage (< 3 V), extremely high charge mobility (up to 6 cm(2) V-1 s(-1) for pentacene and up to 50 cm(2) V-1 s(-1) C8-BTBT), negligible hysteresis and excellent operational stability. This is an important step towards the practical realization of low-cost p-type OTFTs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据