4.8 Article

Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films

期刊

MATERIALS TODAY PHYSICS
卷 8, 期 -, 页码 10-17

出版社

ELSEVIER
DOI: 10.1016/j.mtphys.2018.11.006

关键词

Electron accumulation; Ga2O3; Transport properties; Wide bandgap insulator

资金

  1. Ile de France region ('NOVATECS' C'Nano IdF) [IF-08-1453]
  2. French National Research Agency (ANR) as part of the 'Investissements d'Avenir' program (Labex charmmmat) [ANR-11-LABX-0039]
  3. Fondo Europeo de Desarrollo Regional [ENE2015-74275-JIN]
  4. Centres de Recerca de Catalunya (CERCA) programme/Generalitat de Catalunya
  5. Severo Ochoa programme of the Spanish Ministry of Economy, Industry and Competitiveness (MINECO) [SEV-2013-0295]
  6. Shota Rustaveli National Science Foundation [04/04]

向作者/读者索取更多资源

Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. Nominally undoped epitaxial beta-Ga2O3 thin films without any detectable defect (after a range of state-of-the-art techniques) showed the unexpectedly low resistivity of 3 x 10(-2) Omega cm which was found to be also resistant to high dose proton irradiation (2 MeV, 5 x 10(15) cm(-2) dose) and was largely invariant (metallic) over the phenomenal temperature range of 2 K up to 850 K. The unique resilience and stability of the electrical properties under thermal and highly ionizing radiation stressing, combined with the extended transparency range (thanks to the ultra-wide bandgap) and the already known toughness under high electrical field could open up new perspectives for use as expanded spectral range transparent electrodes (e.g., for UV harvesting solar cells or UV LEDs/lasers) and robust Ohmic contacts for use in extreme environments/applications and for novel optoelectronic and power device concepts. (C) 2018 Elsevier Ltd. All rights reserved.

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