期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 8, 期 7, 页码 Q3229-Q3234出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0421907jss
关键词
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资金
- Ministry of Science and Technology, Taiwan [MOST 107-2918-I-009-010, 108-2636-E-009-008]
- Department of Defense, Defense Threat Reduction Agency [HDTRA1-17-1-011]
- NSF [DMR 1856662]
- Office of Naval Research [N0014-15-1-2392]
- ONR Global [N62909-16-1-2217]
This paper presents a switching circuit for high breakdown-voltage Ga2O3 vertical Schottky rectifiers. Field-plated edge-terminated (FPET) vertical Schottky diodes were fabricated on a 20-mu m thick Si-doped n-type Ga2O3 drift layer which was grown on the 650-mu m thick beta-Ga2O3 substrate via halide vapor phase epitaxy (HVPE). The measured reverse recovery time of the proposed Ga2O3 Schottky diode was 81 ns when switched to a reverse bias voltage of -900 V. The implementation of a switching circuit with the novel Ga2O3 diode is the first demonstrated at such a high switching voltage. This paper also provides insights for the practical implementation of the Ga2O3 vertical Schottky rectifiers from device fabrication to circuit design. (C) The Author(s) 2019. Published by ECS.
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