期刊
NANOSCALE
卷 11, 期 19, 页码 9310-9318出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9nr01700c
关键词
-
类别
资金
- National Key Research and Development Program of China [2018YFB0406503]
- National Natural Science Foundation of China [61874106, 61674137, 11704020]
- Beijing Natural Science Foundation [4184101]
- Science and Technology Program of Beijing [Z181100004418007]
- China Postdoctoral Science Foundation [2017M620873, 2018T110129]
Two-dimensional (2D) heterostructures have attracted a great deal of attention due to their novel phenomena arising from the complementary properties of their constituent materials, and provide an ideal platform for exploring new fundamental research and realizing technological innovation. Here, for the first time, we report the formation of high quality HfS2/h-BN heterostructures by the remote heteroepitaxy technique, in which the large-area single-crystal HfS2 layers were epitaxially grown on c-plane sapphire through a polycrystalline h-BN layer via chemical vapor deposition. It is found that c-sapphire substrates can penetrate monolayer and bilayer h-BN to remotely handle the epitaxial growth of HfS2. Benefitting from the high crystal quality of HfS2 epilayers and the weak interface scattering of HfS2 on h-BN, the HfS2 photodetectors demonstrate excellent performance with a high on/off ratio exceeding 10(5), an excellent photoresponsivity up to 0.135 A W-1 and a high detectivity of over 10(12) Jones. Furthermore, the HfS2/h-BN heterostructures prepared by the remote epitaxy can be rapidly released and transferred to a substrate of interest, which opens a new pathway for large-area advanced wearable electronics applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据