期刊
ACS APPLIED ENERGY MATERIALS
卷 2, 期 5, 页码 3469-3478出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.9b00260
关键词
doped hole conductors; coevaporation; copper-salt dopants; perovskite solar cells; controlled doping; CH3NH3PbI3; Cu(TFSI)(2)
资金
- SIEMENS AG, Munich
- Bavarian state ministry for education science and the arts under SolTech project
- German research council (DFG) [Th 807/6-1, SFB 840]
In n-i-p-type conventional perovskite solar cells (PSCs) using a doped 2,2',7,7'-tetrakis (N,N'-di-p-methoxyphenylamine)-9,9'-spirofluorene (spiro-OMeTAD) hole transport layer (HTL), the issues of reproducibility and stability are closely associated with the redox-inactive additives lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) and 4-tert-butylpyridine (tBP). Instead of these additives, copper(II) di[bis(trifluoromethylsulfonyl)imide] (Cu(TFSI)(2)) is demonstrated as a direct and efficient p-dopant for spiro-OMeTAD. With the adoption of the technologically relevant coevaporation technique, highly uniform, pinhole-free doped HTLs are achieved with controlled amounts of Cu(TFSI)(2) and are spectroscopically and electrically characterized. Using these highly conducting doped HTLs, CH3NH3PbI3-based planar PSCs are realized, which exhibit high photoconversion efficiency (>13% with merely 4 mol % dopant) and excellent reproducibility. Also, by taking advantage of the coevaporation technique, the Cu(TFSI)(2)-doped HTL thickness impact on PSCs is investigated. It is observed that devices with even the thinnest (40 nm) HTL perform very similarly to the ones with a 100 nm thick HTL, which opens up cost-effective preparation strategies. Moreover, a remarkable storage stability over 218 days is observed for devices with a coevaporated Cu(TFSI)(2)-doped HTL, suggesting that this approach of controlled direct doping is a viable alternative to the existing arbitrarily p-doped HTL in perovskite solar cells.
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