期刊
2019 PAN PACIFIC MICROELECTRONICS SYMPOSIUM (PAN PACIFIC)
卷 -, 期 -, 页码 -出版社
IEEE
DOI: 10.23919/panpacific.2019.8696898
关键词
maskless lithography; scanning probe lithography; markerless overlay; 3D patterning; mix and match
资金
- EU FP7 program FP7/2007-2013 [318806]
- European Research Council (ERC) Starting Grant [307079]
- Swiss National Science Foundation SNSF [200020-144464]
- Swiss National Science Foundation (SNF) [200020_144464] Funding Source: Swiss National Science Foundation (SNF)
- European Research Council (ERC) [307079] Funding Source: European Research Council (ERC)
Thermal scanning probe lithography (t-SPL) is a direct write patterning method that creates high-resolution features with a heated scanning probe tip in an organic resist material. It is able to produce dense high-resolution patterns with sub-20 nm half-pitch at ambient conditions which can be transferred into silicon substrates using a hard-mask patterning stack and reactive ion etching (RIE). Feature sizes of transferred lines can be as small as 7 nm. Linear write speeds of up to 20 mmis can be achieved. Different from e-beam lithography (EBL), in t-SPL proximity effects are absent and substrate damage of sensitive materials caused by high energy electrons is avoided. A direct inspection of the patterned area is provided during the writing process. Overlay patterning without additional alignment marks onto pre-existing structures is another feature of the t-SPL method. Existing device stnictures can be located precisely under a resist stack with the local probe tip and the additional target structures can then be generated with <5 nm-precise overlay alignment. One further strength of tSPL is the capability of producing 3D patterns. The process can be controlled to produce 3D stnictures with 1 nm (1u) depth accuracy. Examples of unique devices fabricated by tSPL will be discussed.
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