期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 35, 期 5, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.4994400
关键词
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资金
- Defense Advanced Research Projects Agency
- Office of Naval Research
This paper presents characterization of the effects of XeF2 vapor phase etching conditions on the lateral etch rate and etch uniformity of a sacrificial, epitaxial Nb2N layer grown between a III-N high-electron-mobility transistor heterostructure and a 6H-SiC substrate. To achieve uniform and repeatable lateral Nb2N removal, an etch temperature of 100 degrees C or higher was required, providing average etch rates ranging from 10 to 40 lm/min. A net compressive stress and positive strain gradient in the released III-N material were inferred from the buckling of clamped-clamped beams and the convex curvature of cantilever structures, respectively. XeF2 etching of epitaxial Nb2N sacrificial layers in III-N material structures allows for a highly selective, completely dry release process that is compatible with common micromachining and epitaxial lift-off techniques.
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