期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 8, 期 6, 页码 Q106-Q110出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0211906jss
关键词
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资金
- NASA SBIR grant through Structured Materials Industries, Inc. [NNX17CG70P]
- National Science Foundation [IIP-1602006, ECCS-1809891]
In this work, we have compared and modeled the electrical characteristics of two different geometrical structures of unintentionally doped (UID) thin film beta-Ga2O3 based Schottky barrier diodes (SBD). It was observed that a lateral SBD structure can withstand much higher breakdown voltage compared to the vertical SBD structure, but suffers from significantly higher on-resistance, which can be explained considering the differences in their geometrical configuration. The schottky barrier height was determined from both capacitance voltage (C-V) and current density voltage (J-V) characteristics of the SBDs, which matched well among themselves and with the values reported in the literature. The C-V measurement was also used to determine the doping concentration in the beta-Ga2O3 substrate, which agreed well with the manufacturer specifications. (c) 2019 The Electrochemical Society.
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