2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

Various 2D/3D heterostructures can be created by harnessing the advantages of both the layered two-dimensional semiconductors and bulk materials. A semiconducting gate field-effect transistor (SG-FET) structure based on 2D/3D heterostructures is proposed here. The SG-FET is demonstrated on an AIGaN/GaN high-electron mobility transistor (HEMT) by adopting single-layer MoS2 as the gate electrode. The MoS2 semiconducting gate can effectively turn on and turn off the HEMT without sacrificing the subthreshold swing and breakdown voltage. Most importantly, the proposed semiconducting gate can deliver inherent over-voltage protection for field-effect transistors (FETs). Furthermore, the self-adjustable semiconducting gate potential with drain bias can even boost the ON-current while guaranteeing the safe operation of FET. In implementing the semiconducting gate, the layered two-dimensional materials such as the adopted MoS2 have several important benefits such as the feasibility of high-quality crystals on different gate dielectrics and the good controllability of semiconducting gate depletion threshold voltage by the layer thickness. The demonstrated semiconducting gate as over-voltage protection for HEMT can be extended to other FETs, which can become another advantageous arena for the possible applications of the layered two-dimensional materials.