期刊
ISCIENCE
卷 16, 期 -, 页码 368-+出版社
CELL PRESS
DOI: 10.1016/j.isci.2019.05.043
关键词
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资金
- National Key R&D Program of China [2017YFA0303604]
- National Natural Science Foundation of China [11674385, 11404380, 11721404, 51672007]
- Youth Innovation Promotion Association of CAS [2018008]
- Key Research Program of Frontier Sciences CAS [QYZDJSSW-SLH020]
- Open Research Fund of Key Laboratory of Polar Materials and Devices Ministry of Education
Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a giant electroresistance. It functions as a ferroelectric tunnel junction at low resistance state and as a Schottky junction at high resistance state, due to interface engineering through the field-induced migration of oxygen vacancies. An extremely large electroresistance with ON/OFF ratios of 5.1 x10(7) at room temperature and 2.1 x10(9) at 10 K is achieved, using an ultrathin BaTiO(3-delta )layer as the ferroelectric barrier and a semiconducting Nb-doped SrTiO3 substrate as the bottom electrode. The results point toward an appealing way for the design of high-performance resistive switching devices based on ultrathin oxide heterostructures by ionic controlled interface engineering.
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