4.7 Article

Effect of grain growth on the thermal conductivity of liquid-phase sintered silicon carbide ceramics

期刊

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
卷 37, 期 11, 页码 3475-3481

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ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2017.04.050

关键词

Silicon carbide; Thermal conductivity; Grain growth; Lattice oxygen content

资金

  1. National Research Foundation of Korea (NRF) - Korea government (MSIP) [2015R1A2A2A01004860]
  2. National Research Foundation of Korea [2015R1A2A2A01004860] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The effect of grain growth on the thermal conductivity of SiC ceramics sintered with 3 vol% equimolar Gd2O3-Y2O3 was investigated. During prolonged sintering at 2000 degrees C in an argon or nitrogen atmosphere, the beta -> alpha phase transformation, grain growth, and reduction in lattice oxygen content occurs in the ceramics. The effects of these parameters on the thermal conductivity of liquid-phase sintered SiC ceramics were investigated. The results suggest that (1) grain growth achieved by prolonged sintering at 2000 degrees C accompanies the decrease of lattice oxygen content and the occurrence of the beta -> alpha phase transformation; (2) the reduction of lattice oxygen content plays the most important role in enhancing the thermal conductivity; and (3) the thermal conductivity of the SiC ceramic was insensitive to the occurrence of the beta -> alpha a phase transformation. The highest thermal conductivity obtained was 225 W(m K)(-1), after 12 h sintering at 2000 degrees C under an applied pressure of 40 MPa in argon. (C) 2017 Elsevier Ltd. All rights reserved.

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