期刊
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
卷 37, 期 2, 页码 509-515出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2016.09.017
关键词
beta-SiC; Preferred orientation; Halide laser CVD (HLCVD); Microstructure; Deposition rate (R-dep)
资金
- National Natural Science Foundation of China [51272196, 51372188, 51521001]
- 111 Project [B13035]
- International Science & Technology Cooperation Program of China [2014DFA53090]
- Fundamental Research Funds for the Central Universities, China [WUT2015III023]
Highly oriented beta-SiC bulks with high hardness were fabricated by halide laser chemical vapor deposition (HLCVD) using SiCl4, CH4 and H-2 as precursors. The effects of total pressure (P-tot) and deposition temperature (T-dep) on the preferred orientation, microstructure, deposition rate (R-dep) and micro-hardness were investigated. The < 110 >-oriented beta-SiC bulks were obtained at low P-tot (2-4 kPa), non-oriented beta-SiC bulks were obtained at mediate P-tot (6 kPa), and < 111 >-oriented beta-SiC bulks were obtained at high P-tot (10-40 kPa), exhibiting faceted, cauliflower-like and six-fold pyramid-like microstructure, respectively. The maximum R-dep of < 111 >- and < 110 >-oriented beta-SiC bulks were 3600 and 1300 mu m/h at, respectively. The activation energy obtained by the plot of lgR(dep)-T-dep(-1) is 170 to 280 kJ mol(-1), showing an exponential relation with P-si. The Vickers micro-hardness of beta-SiC bulks increased with increasing P-tot and showed the highest value of 35 GPa at P-tot = 40 kPa with a complete < 111 > orientation. (C) 2016 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据