期刊
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
卷 37, 期 3, 页码 1135-1139出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2016.10.028
关键词
Zirconia; Ferroelectricity; Atomic layer deposition; Thin films; TEM
资金
- Ministry of Science and Technology (MOST) of Taiwan [105-2622-8-002-001, 104-2622-8-002-003, 103-2221-E-002-078-MY2]
- Taiwan Semiconductor Manufacturing Company (TSMC)
- Ministry of Science and Technology (MOST) of Taiwan [105-2622-8-002-001, 104-2622-8-002-003, 103-2221-E-002-078-MY2]
- Taiwan Semiconductor Manufacturing Company (TSMC)
Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12 mu C cm (-2) were obtained in the as-deposited ZrO2 thin films prepared by remote plasma atomic layer deposition at 300 degrees C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc2(1) in the as-deposited ZrO2 thin films was confirmed by high-resolution transmission electron microscopy. (C) 2016 Elsevier Ltd. All rights reserved.
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