期刊
RSC ADVANCES
卷 9, 期 40, 页码 23261-23266出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9ra03560e
关键词
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资金
- New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry & Energy, Republic of Korea [20163030014020]
- Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) - Ministry of Science and ICT [NRF-2017M1A2A2087351]
- Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry and Energy, Republic of Korea [20154030200760]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20174030201760] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, we focused on understanding the roles of a polysilicon (poly-Si) layer in poly-Si/SiOx/c-Si passivating contacts. Passivating contact formation conditions were varied by changing the doping method, annealing temperature and time, polysilicon layer thickness, and polysilicon doping concentration. Our observations indicated that the roles of polysilicon are contact, in-diffusion barrier action, field effect, gettering, and light absorption. Based on the observations, a iV(OC) of 741 mV was obtained. Finally, to increase J(SC) with high V-OC, the polysilicon was etched after hydrogenation to reduce light absorption with high passivation quality. iV(OC) was not affected by etching; moreover, by etching the polysilicon from 300 nm to 60 nm, the cell efficiency increased from 20.48% to 20.59% with increasing J(SC), constant V-OC, and fill factor.
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