期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 21, 期 17, 页码 8663-8678出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9cp00897g
关键词
-
资金
- German Federal Ministry of Education and Research (BMBF) [05K16KH1]
- National Science Foundation of China [U1532128]
- LNF under the IHEP
- LNF under the INFN
We have conducted a comprehensive investigation of the optical and vibrational properties of the binary semiconductor SnSe as a function of temperature and pressure by means of experimental and ab initio probes. Our high-temperature investigations at ambient pressure have successfully reproduced the progressive enhancement of the free carrier concentration upon approaching the Pnma -> Bbmm transition, whereas the pressure-induced Pnma -> Bbmm transformation at ambient temperature, accompanied by an electronic semiconductor -> semi-metal transition, has been identified for bulk SnSe close to 10 GPa. Modeling of the Raman-active vibrations revealed that three-phonon anharmonic processes dominate the temperature-induced mode frequency evolution. In addition, SnSe was found to exhibit a pressure-induced enhancement of the Born effective charge. Such behavior is quite unique and cannot be rationalized within the proposed effective charge trends of binary materials under pressure.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据