期刊
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
卷 -, 期 -, 页码 -出版社
IEEE
DOI: 10.1109/irps.2019.8720411
关键词
p-GaN gate; sidewall; TDDB; gate leakage; lifetime; EBIC
资金
- EU [662133, VEGA 1/046/19]
- MESRS of Slovakia
In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/ p-GaN junction. A detailed investigation of the process split and geometry dependency is done. From this study, we propose that a parasitic sidewall transistor is present, which is the cause for degradation in the p-GaN gate. The sidewall leakage has been substantiated by TCAD simulation and also by a novel method consisting of EBIC measurements directly applied on the cross section of a p-GaN gate. Based on this analysis we performed a process modification, which has led to a significant improvement in terms of gate reliability.
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