期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 139, 期 30, 页码 10216-10219出版社
AMER CHEMICAL SOC
DOI: 10.1021/jacs.7b05765
关键词
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资金
- National Key RD program [2016YFA0300904, 2016YFA0300901]
- National Science Foundation of China (NSFC) [61325021, 51572289, 91321309, 11290162/A040106]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSW-SLH004]
- CAS [XDB07010100]
In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H -> 1T phase transition in monolayer MoS2 to form mosaic structures. These 2H->1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements. On the basis of a selected-area phase patterning,process, we fabricated MoS2 FETs inducing 1T phase transition within the metal contact areas, which exhibit substantially improved device performances. Our results open up a new route for phase engineering in monolayer MoS2 and other transition metal dichalcogenide (TMD) materials.
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