期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 139, 期 27, 页码 9392-9400出版社
AMER CHEMICAL SOC
DOI: 10.1021/jacs.7b05131
关键词
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资金
- National Research Foundation, Prime Minister's Office under the midsized Research Centre (CA2DM)
- Singapore National Research Foundation (NRF) through the Singapore Berkeley Research Initiative for Sustainable Energy (SinBeRISE) Programme
- CAS Pioneer Hundred Talents Program
- U.S. Department of Energy [DE-FG02-09ER46554]
- McMinn Endowment
- U.S. Department of Energy, Office of Science, Basic Energy Science, Materials Sciences and Engineering Division
- Center for Advanced Soft Electronics of UNIST [1.160075]
- Center for Advanced Soft Electronics under the Global Frontier Research Program through the National Research Foundation - Ministry of Science, ICT, and Future Planning, Korea [2011-0031630]
- ORNL's Center for Nanophase Materials Sciences (CNMS)
- National Research Foundation of Korea [2013M3A6A5073173] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0 aligned and 60 degrees antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60 degrees antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications.
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