期刊
ACS APPLIED NANO MATERIALS
卷 2, 期 7, 页码 4133-4142出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.9b00587
关键词
gallium nitride (GaN); light-emitting diodes (LEDs); nanowires; colloidal lithography; nanosphere lift-off lithography (NSLL); top-down process; selective area nanofabrication; multiquantum well (MQW)
资金
- Lower Saxony Ministry for Science and Culture (N-MWK)
- European project of ChipScope - European Union's Horizon 2020 research and innovation program [737089]
- German Research Foundation (DFG) [PE 885/3-1]
- China Scholarship Council (CSC) [201206010284]
- Ministry of Research, Technology and Higher Education of the Republic of Indonesia (RISTEKDIKTI)
- European Research Council, under the European Union's Seventh Framework Programme (FP/2007-2013)/ERC Grant [336917]
- ICREA Academia Program
- DFG Project GrK NanoMet
- Serra Hunter Program
- Georg-Christoph-Lichtenberg Ph.D. scholarship (Tailored Light)
- Indonesian -German Centre for Nano and Quantum Technologies (IG-Nano)
For various lighting and monolithic sensor systems application, vertically aligned three-dimensional (3D) gallium nitride (GaN)- and indium gallium nitride (InGaN)/GaN-based LED nanowire arrays with sub-200 nm feature sizes (down to 35 nm) were fabricated using a nanosphere liftoff lithography (NSLL) technique combined with hybrid top down etching (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching). Owing to the lithographic opening and well-controlled surface functionalization prior to the polystyrene nanosphere (PN) deposition, vertical GaN nanowire arrays with an area density of 9.74 X 10(8) cm(-2) and an aspect ratio of >10 could be realized in a specified large area of 1.5 X 1.5 mm(2). Optoelectrical characteristics of the nanoLEDs were further investigated in cathodoluminescence (CL) measurements, in which multiquantum well (MQW) shows a clear CL-emission at a wavelength of 465 nm. Thus, using NSLL to manufacture low-cost but highly ordered 3D GaN-based nanowires and nanoLEDs is a feasible alternative to other sophisticated but more expensive nanolithography methods.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据