期刊
ACS APPLIED POLYMER MATERIALS
卷 1, 期 3, 页码 542-551出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsapm.8b00234
关键词
organic electronics; organic semiconductor material; low-energy gap polymer; photothermoelectric conversion device; NIR-II
资金
- fund for the Development of Human Resources in Science and Technology of the Japan Science and Technology Agency, JST
- Ministry of Education, Culture, Sports, Science and Technology [26410087]
- JSPS KAKENHI [17J07292, JP17K17720, JP17H06092]
- JST CREST [JPMJCR1522]
- Grants-in-Aid for Scientific Research [26410087, 17J07292] Funding Source: KAKEN
Organic materials absorbing near-infrared (NIR) light are very attractive for the fabrication of optoelectronic devices. In this study, we developed an ultralow energy gap copolymer TzQI-TDPP composed of thiadiazoloquinoxalinimide (TzQI) and thiophene-flanked diketopyrrolopyrrole (TDPP) repeat units. TzQI-TDPP has a nearly identical narrow energy gap (0.60 eV) to that of the p-channel thienoisoindigo-based homopolymer PTII. Both polymers exhibit broad and intense optical absorption in the NIR-II light window (1000-1700 nm). Examination of charge polarity using field-effect transistors indicates p-channel conduction for PTII and n-channel-dominant ambipolar conduction for TzQI-TDPP with moderate mobilities, in which a thin film of TzQI-TDPP displayed air-stable n-channel performance with a persistent mobility of over 0.003 cm(2) V-1 s(-1) after 30 days. In addition, we explored the photothermal (PT) and thermoelectric (TE) effects in the NIR-II light window by fabricating a photothermoelectric device. Both polymers exhibit PT conversion efficiencies of similar to 30%, and the TE effect is observed in p-channel PTII and n-channel TzQI-TDPP. Notably, the PTII and TzQI-TDPP films display excellent photostability during on-off irradiating light cycles, indicating prominent NIR light detection. Our work not only provides a set of p-channel and n-channel-dominant ambipolar polymers with ultralow energy gaps but also demonstrates their underlying structure-property correlations based on electronic structures and their promising potential in applications utilizing NIR-II light.
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