期刊
NEW JOURNAL OF CHEMISTRY
卷 43, 期 30, 页码 11865-11870出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9nj02731a
关键词
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资金
- Ministry of Education, Culture, Sports, Science, and Technology of Japan [16K13974, 18H02044]
- Takahashi Industrial and Economic Research Foundation
- Grants-in-Aid for Scientific Research [16K13974, 18H02044] Funding Source: KAKEN
The crystal structures and temperature-dependent transistor properties of newly prepared pentyl and hexyl derivatives of the title compounds are investigated. Similarly to the propyl derivative, the pentyl derivative makes air-stable n-channel transistors in the form of evaporated films as well as single crystals, and the large as-grown single crystals obtained by solvent-vapor annealing show mobilities exceeding 1 cm(2) V-1 s(-1). The mobility in the intercolumnar direction is comparable to the columnar direction, reflecting the two-dimensional S-S network and transfer integrals. The sharp rise of the transfer curve is maintained down to low temperatures, indicating the absence of deep traps and a comparatively small number of total traps.
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