期刊
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
卷 101, 期 4, 页码 1471-1478出版社
WILEY
DOI: 10.1111/jace.15315
关键词
chemical vapor deposition; films; silicon carbide
资金
- National Natural Science Foundation of China [51372188, 51521001]
- 111 Project [B13035]
- International Science & Technology Cooperation Program of China [2014DFA53090]
- Natural Science Foundation of Hubei Province [2016CFA006]
- Fundamental Research Funds for the Central Universities [WUT: 2017II43GX]
- Science Challenge Project [TZ2016001]
(111)-oriented beta-SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808nm) from a single liquid precursor of hexamethyldisilane (Si(CH3)(3)-Si(CH3)(3), HMDS) without H-2. The effects of laser power (P-L), total pressure (P-tot) and deposition temperature (T-dep) on the microstructure, carbon formation and deposition rate (R-dep) were investigated. beta-SiC films with carbon formation and graphite films were prepared at P-L >= 170W and P-to >= 1000Pa, respectively. Carbon formation strongly inhibited the film growth. beta-SiC films without carbon formation were obtained at P-tot = 400-800Pa and P-L = 130-170W. The maximum R-dep was about 50m.h(-1) at P-L=170W, P-tot=600Pa and T-dep=1510K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions.
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