4.3 Article

Effect of Strain on Magnetic Coupling in Ga-Doped WS2 Monolayer: Ab Initio Study

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SPRINGER
DOI: 10.1007/s10948-017-4402-0

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WS2 monolayer; Nonmagnetic metal; Strain; DFT calculations

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  1. Shanghai Committee of Science and Technology, China [ZHT.K1507]

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Magnetic properties of Ga-doped WS2 monolayer under strain are investigated by ab initio methods. Without strain, the Ga-doped WS2 monolayer is a magnetic nanomaterial, and the total magnetic moment is about 0.82 mu(B). We applied strain to Ga-doped WS2 monolayer from - 10 to 10%. The magnetic properties are modified under different strains, and a maximum magnetic moment reaches 3.09 mu(B) at - 3% compressive strain. However, the magnetic moment of system decreases to zero sharply when compressive strain arrived at - 10%. The coupling among Ga 3d, W 5d, and S 3p states is responsible for the strong strain effect on the magnetic properties. Our studies predict Ga-doped WS2 monolayer under strain to be candidates for application in spintronics.

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