4.1 Article

Thermal, dielectric, and surface analysis of NaDP doped glycine phosphite single crystals

期刊

JOURNAL OF STRUCTURAL CHEMISTRY
卷 58, 期 8, 页码 1668-1671

出版社

MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0022476617080261

关键词

atomic force microscopy; characterization; surfaces; growth from solutions; single crystal growth; dielectric materials

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Transparent, unidirectional single crystals of sodium dihydrogen phosphate-doped glycine phosphite (NaDP-GPI) are grown by the Sankaranarayanan-Ramasamy method. The good quality crystal is obtained under controlled thermal conditions. The functional groups and melting temperature of NaDP-GPI single crystals are analysed. The phase transition temperature of NaDP-GPI is calculated from the dielectric studies. The mound-like patterns are observed on the surface of the crystal. The growth process under the controlled thermal condition was observed by optical studies. The obtained results are discussed in detail.

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