4.3 Article

Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection

期刊

JOURNAL OF SOLID STATE ELECTROCHEMISTRY
卷 22, 期 1, 页码 61-67

出版社

SPRINGER
DOI: 10.1007/s10008-017-3716-y

关键词

Electrolyte-gated field effect transistor; ZnO nanorods; Glucose biosensor; Glucose; Diabetes

资金

  1. Institute for Advanced Studies in Basic Science (IASBS) [G2016IASBS119]
  2. University of Tehran
  3. Iran National Science Foundation (INSF) [92019263]

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In this paper, we report on growth of ZnO nanorods on the surface of gold interdigital electrodes and its implementation as a conductive n-type channel for the fabrication of a liquid-gated field effect transistor. Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated device was used as a four-electrode glucose biosensor. The resistance of the conductive channel was affected by addition of glucose. The applied bias voltage to the gate in the fabricated device affects the channel resistance in the same manner as the increase of enzymatic products during the glucose oxidation. Large effective area, good conductivity, and biocompatibility properties of ZnO nanorods are the key features in this highly sensitive and stable biosensor. Our measurements showed that the threshold voltage of transistor was about 0.75 V. The current increased in the presence of the glucose and exhibited a dynamic linear range with the logarithm of glucose concentration in the range between 0.01 and 5 mM. The detection limit was about 3.8 mu M.

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